Author:
Myers S. M.,Bishop D. M.,Follstaedt D. M.,Stein H. J.,Wampler W. R.
Abstract
ABSTRACTThe strongly exothermic reactions of H and Cu with internal surfaces in Si and Ge were examined in experiments employing ion implantation, ion-beam analysis, transmission electron microscopy, and infrared spectroscopy. The dissociation energy of the Si-H surface bond was determined to be 2.6±0.1 eV, so that the monohydride is more stable than molecular H2, whose dissociation energy per atom is 2.26 eV. Initial experiments indicate a dissociation energy for the Ge-H surface bond of =1.9 eV. Copper is bound to the Si surface with an energy of 2.2±0.2 eV relative to solid solution, as compared to a reported binding energy of 1.5 eV for Cu in the precipitated Cu3Si phase.
Publisher
Springer Science and Business Media LLC
Cited by
43 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献