Dissociation kinetics of hydrogen-passivated (111) Si-SiO2interface defects
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.3444/fulltext
Reference28 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
3. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
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