SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using implantation-Reference-Cited by-同舟云学术

SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using implantation

Published:2003-01 Issue: Volume:203-204 Page:504-507
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hayashi S.,Sasaki T.,Kawamura K.,Matsumura A.,Yanagihara K.,Tanaka K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference2 articles.

1. K. Tokiguchi, Y. Yamashita, T. Seki, I. Hashimoto, in: Proceedings of the ECS International Symposium on SOI Technology and Devices, 1996, Paris, France, pp. 28–33.

2. Oxygen isotopic exchange between an18O+implanted Si layer and a natural SiO2capping layer during high‐temperature annealing

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