Oxygen isotopic exchange between an18O+implanted Si layer and a natural SiO2capping layer during high‐temperature annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110295
Reference6 articles.
1. Study of the microstructure of low energy (70 keV) oxygen implanted silicon
2. Direct formation of device worthy thin film SIMOX structures by low energy oxygen implantation
3. Analysis of thin‐film silicon‐on‐insulator structures formed by low‐energy oxygen ion implantation
4. Oxygen self-diffusion studies using negative-ion secondary ion mass spectrometry (SIMS)
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mixed Orientation Si–Si Interfaces by Hydrophilic Bonding and High Temperature Oxide Dissolution;Journal of The Electrochemical Society;2008
2. Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materials;Semiconductor Science and Technology;2005-02-18
3. SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using implantation;Applied Surface Science;2003-01
4. Analysis of Interface Microstructure Evolution in Separation by IMplanted OXygen (SIMOX) Wafers;Japanese Journal of Applied Physics;2000-07-30
5. In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon;Journal of Applied Physics;2000-06
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