Direct formation of device worthy thin film SIMOX structures by low energy oxygen implantation

Author:

Nejim A.,Li Y.,Marsh C.D.,Hemment P.L.F.,Chater R.J.,Kilner J.A.,Booker G.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Proc. 5th Int. Symp. on SOI Technology and Devices;Nakashima,1992

2. Proc. 5th Int. Symp. on SOI Technology and Devices;Yoshino,1992

3. Formation of thin silicon films using low energy oxygen ion implantation

4. Proc. 5th Int. Symp. on SOI Technology and Devices;Li,1992

5. Analysis of thin‐film silicon‐on‐insulator structures formed by low‐energy oxygen ion implantation

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1. Formation of silicon nanoclusters in buried ultra-thin oxide layers;Semiconductor Physics Quantum Electronics and Optoelectronics;2011-09-25

2. Stimulated Creation of the SOI Structures with Si Nano-Clustersw by Low–Dose SIMOX Technology;Solid State Phenomena;2011-08

3. Microstructural evolution of low-dose separation by implanted oxygen materials implanted at 65 and 100 keV;Journal of Materials Research;2003-09

4. Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation;Surface and Coatings Technology;2002-09

5. Synthesis of buried silicon oxide layers by water plasma immersion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07

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