Formation of thin silicon films using low energy oxygen ion implantation-Reference-Cited by-同舟云学术

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Formation of thin silicon films using low energy oxygen ion implantation

Published:1991-04 Issue:1-4 Volume:55 Page:555-560
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Robinson A.K.,Marsh C.D.,Bussmann U.,Kilner J.A.,Li Y.,Vanhellemont J.,Reeson K.J.,Hemment P.L.F.,Booker G.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Improved subthreshold characteristics of n-channel SOI transistors

2. Some properties of thin-film SOI MOSFETs

3. Semiconductor-On-Insulator and Thin Film Transistor Technology;Celler,1986

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of implantation temperature on exfoliation of H2+-implanted Si;Vacuum;2014-11

2. Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV;Journal of Materials Science: Materials in Electronics;2002

3. The Study of the Formation of Thin SOI Structure by SIMOX with Water Plasma;MRS Proceedings;2001

4. On the segregation of metals during low-energy oxygen bombardment of silicon;Applied Surface Science;1998-09

5. Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut;Journal of Electronic Materials;1998-09

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