On the segregation of metals during low-energy oxygen bombardment of silicon-Reference-Cited by-同舟云学术

On the segregation of metals during low-energy oxygen bombardment of silicon

Published:1998-09 Issue:1-4 Volume:135 Page:200-204
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Petravić Mladen

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. N. Herbots, O.C. Hellman, P. Ye, X. Wang, O. Vancauwenberghe, in: J.W. Rabalais (Ed.), Low Energy Ion–Surface Interactions, Wiley, Chichester, 1994, p. 389.

2. Formation of thin silicon films using low energy oxygen ion implantation

3. Implantation and ion beam mixing in thin film analysis

4. Exceptionally pronounced redistribution of silver in oxygen bombarded silicon

5. Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamics of the ion beam induced nitridation of silicon;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-07

2. Low energy O2+ and N2+ beam-induced profile broadening effects in Si;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-05

3. Segregation effects of Li, K, and F in Si during depth profiling by oxygen ions;Journal of Applied Physics;2000-03

4. On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment;Surface and Interface Analysis;2000-02

5. On the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low-energy oxygen ions;Journal of Applied Physics;1999-04-15