On the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low-energy oxygen ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370302
Reference16 articles.
1. Oxidation of silicon by low energy oxygen bombardment
2. Buried oxides: where we have been and where we are going
3. On the effect of an oxygen beam in sputter depth profiling
4. Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions
5. On the estimation of depth resolution during sputter profiling
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2. Segregation under low-energy oxygen bombardment in the near-surface region;Applied Surface Science;2008-12
3. Photoluminescence band of Hf origin in hafnium-implanted silicon in the energy range700meVto950meV;Physical Review B;2005-05-31
4. Interdiffusion studies for HfSixOy and ZrSixOy on Si;Journal of Applied Physics;2002-10
5. Dynamics of the ion beam induced nitridation of silicon;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-07
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