Study of the microstructure of low energy (70 keV) oxygen implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105761
Reference9 articles.
1. Formation of thin silicon films using low energy oxygen ion implantation
2. The role of implantation temperature and dose in the control of the microstructure of SIMOX structures
3. Defects in SIMOX structures: causes and solutions
4. Mechanisms of defect formation and growth during thermal ramping and annealing in oxygen implanted silicon-on-insulator material
5. New trends in SIMOX
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon;Applied Surface Science;2012-11
2. In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon;Journal of Applied Physics;2000-06
3. Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen;Applied Physics Letters;1998-06
4. SIMOX: processing, layer parameters design, and defects control;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05
5. Oxygen isotopic exchange between an18O+implanted Si layer and a natural SiO2capping layer during high‐temperature annealing;Applied Physics Letters;1993-11-15
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