The role of implantation temperature and dose in the control of the microstructure of SIMOX structures-Reference-Cited by-同舟云学术

The role of implantation temperature and dose in the control of the microstructure of SIMOX structures

Published:1988-12 Issue:3-4 Volume:8 Page:163-186
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Reeson K.J.,Robinson A.K.,Hemment P.L.F.,Marsh C.D.,Christensen K.N.,Booker G.R.,Chater R.J.,Kilner J.A.,Harbeke G.,Steigmeir E.F.,Celler G.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon;Izumi;Electron Lett.,1978

2. Nucleation and growth of oxide precipitates in silicon implanted with oxygen;Stoemenos;Thin Solid Films,1985

3. Structural characterization of SIMOX structures;Margail,1985

4. Si-on SiO2 structures by lamp annealing of oxygen implanted Si;Celler,1986

5. Measurement and modelling of circuit speed of CMOS on oxygen implanted SOI;Davis;IEEE Electron Dev. Trans.,1987

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