The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference30 articles.
1. Influence of metal trapping on the shape of cavities induced by high energy He+ implantation
2. Gettering of copper to hydrogen-induced cavities in multicrystalline silicon
3. Trapping of Pd, Au, and Cu by implantation-induced nanocavities and dislocations in Si
4. Diffusion and transient trapping of metals in silicon
5. Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures
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1. Growth of Compact CH3NH3PbI3 Thin Films Governed by the Crystallization in PbI2 Matrix for Efficient Planar Perovskite Solar Cells;ACS Applied Materials & Interfaces;2018-02-26
2. Numerical simulations and modeling of the stability of noble gas atoms in interaction with vacancies in silicon;Computational Materials Science;2014-12
3. Microstructural evolution upon annealing in Ar-implanted Si;Applied Surface Science;2011-08
4. Annealing ambient on the evolution of He-induced voids in silicon;Applied Surface Science;2011-06
5. Enhanced nucleation of Ag nanoparticles by vacancy-type defects in Ar-ions implanted spinel;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-12
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