Influence of metal trapping on the shape of cavities induced by high energy He+ implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2173041
Reference20 articles.
1. Interaction of copper with cavities in silicon
2. Binding of cobalt and iron to cavities in silicon
3. Voids in Silicon by He Implantation: From Basic to Applications
4. Voids in silicon substrates for novel applications
5. Gettering of transition metals by cavities in silicon formed by helium ion implantation
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2. Growth and migration of nanocavities in He+ multi-implanted Si measured by in situ small-angle X-ray scattering;Materials Science and Engineering: B;2014-03
3. Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon;Journal of Applied Physics;2013-07-14
4. Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors;Journal of Contemporary Physics (Armenian Academy of Sciences);2012-11
5. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-07
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