Influence of metal trapping on the shape of cavities induced by high energy He+ implantation

Author:

El Bouayadi R.,Regula G.,Lancin M.,Pichaud B.,Desvignes M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01

2. Growth and migration of nanocavities in He+ multi-implanted Si measured by in situ small-angle X-ray scattering;Materials Science and Engineering: B;2014-03

3. Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon;Journal of Applied Physics;2013-07-14

4. Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors;Journal of Contemporary Physics (Armenian Academy of Sciences);2012-11

5. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-07

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