Barrier height modification of Au/n-Si Schottky structures by swift heavy ion irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100)
2. Effects of hydrogen ion implantation on Al/Si Schottky diodes
3. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
4. Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics
5. The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs
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2. Gamma irradiation effects on Al/n-Si Schottky junction properties;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-12
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4. Effect of 100 MeV Si7+ ions’ irradiation on Pd/n-GaAs Schottky diodes;Radiation Effects and Defects in Solids;2017-12-02
5. Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation;Radiation Effects and Defects in Solids;2017-08-03
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