Effect of 100 MeV Si7+ ions’ irradiation on Pd/n-GaAs Schottky diodes-Reference-Cited by-同舟云学术

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Effect of 100 MeV Si7+ ions’ irradiation on Pd/n-GaAs Schottky diodes

Published:2017-12-02 Issue:11-12 Volume:172 Page:975-984
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Sinha O. P.¹

Affiliation:

1. Amity Institute of Nanotechnology, Amity University, Noida, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2017.1421191

Reference29 articles.

1. Combined proton and electron irradiation for improved GTO thyristors

2. Synthesis of buried SiC using an energetic ion beam

3. Single‐energy, MeV implant isolation of multilayer III‐V device structures

4. Electrical and photoelectrical characteristics of Au/GaN/GaAs Schottky diode

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1. Dependence of an electric capacitance on the constant voltage C = f(U) in pure bentonite, composites and semiconductors;Applied Physics A;2019-08-13

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