Development of 1mA cluster ion beam source-Reference-Cited by-同舟云学术

Development of 1mA cluster ion beam source

Published:2005-08 Issue:1-2 Volume:237 Page:455-458
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Seki T.,Matsuo J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Incident angle dependence of the sputtering effect of Ar-cluster-ion bombardment

2. Surface treatment of diamond films with Ar and O2 cluster ion beams

3. A. Nishiyama, M. Adachi, N. Toyoda, N. Hagiwara, J. Matsuo, I. Yamada, in: AIP Conference Proceedings, 15th International Conference on Application of Accelerators in Research and Industry, 475, 1998, p. 421.

4. Effects of bombardment by high energy gas cluster ion beams

5. Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

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