Surface Smoothing by Gas Cluster Ion Beam Using Decreasing Three-Step Energy Treatment

Abstract

A three-step treatment of Si wafers by gas cluster ion beam with decreasing energy was used to improve the performance of surface smoothing. First, a high energy treatment at 15 keV and an ion fluence of 2 × 1016 cm−2 was used to remove initial surface features (scratches). Next, treatments at 8 and 5 keV with the same fluences reduced the roughness that arose due to the formation of morphological features induced by the surface sputtering at the first high energy step. The surface morphology was characterized by the atomic force microscopy. The root mean square roughness Rq and 2D isotropic power spectral density functions were analyzed. For comparison, the smoothing performances of single-step treatments at 15, 8, and 5 keV were also studied. The lowest roughness values achieved for the single and three-step treatments were 1.06 and 0.65 nm, respectively.