Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates-Reference-Cited by-同舟云学术

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Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

Published:2010-11 Issue:6 Volume:10 Page:1407-1410
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Seo Yong Gon,Baik Kwang Hyeon,Song Keun-Man,Lee Seokwoo,Yoon Hyungdo,Park Jae-Hyoun,Oh Kyunghwan,Hwang Sung-Min

Funder

Korea Science and Engineering Foundation

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference18 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE

3. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire

4. Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire

5. Nitride emitters go nonpolar

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates;Scientific Reports;2019-07-05

2. Reduced efficiency droop of nonpolar a-plane (11-20) GaN-based light-emitting diodes by vertical injection geometry;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07

3. Improved Light Extraction Efficiency of Nonpolar a-Plane GaN-Based LEDs Based on Embedded Pyramid-Shape Air-Gap Structure;Journal of Display Technology;2013-05

4. First principles calculations for band-gap energy properties of non-polar and semi-polar ternary nitride alloys under in-plane strain;The European Physical Journal B;2013-02

5. Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates;Optics Express;2011-10-28

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