Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates
Author:
Funder
RCUK | Engineering and Physical Sciences Research Council
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-46343-0.pdf
Reference29 articles.
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3. Takeuchi, T., Amano, H. & Akasaki, I. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells. Jpn. J. Appl. Phys. 39, 413–416 (2000).
4. Gorai, A., Panda, S. & Biswas, D. Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output. Optik 140, 665–672 (2017).
5. Arif, R. A., Zhao, H., Ee, Y. & Tansu, N. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes. IEEE J. Quantum Electronics 44, 573–580 (2008).
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