Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
3. Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition
4. Nonpolar (11&1macr;0)a-Plane Gallium Nitride Thin Films Grown on (1&1macr;02)r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth
5. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
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1. Using a Au/pitted a-plane GaN substrate to aggregate polar molecules for highly efficient surface-enhanced Raman scattering;The Journal of Chemical Physics;2022-09-21
2. Roles of growth kinetics on GaN non-planar facets under metalorganic vapor phase epitaxy condition;Applied Physics Express;2020-05-20
3. Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies;physica status solidi (b);2020-04
4. Reduced efficiency droop of nonpolar a-plane (11-20) GaN-based light-emitting diodes by vertical injection geometry;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07
5. Lattice distortion analysis of nonpolar a-plane $$(11\bar 20)$$ GaN films by using a grazing-incidence X-ray diffraction technique;Journal of the Korean Physical Society;2015-02
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