Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference31 articles.
1. High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz
2. Unpassivated AlGaN∕GaN HEMTs with CW power density of 3.2 W∕mm at 25 GHz grown by plasma-assisted MBE
3. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
4. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
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1. Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs;Journal of Ovonic Research;2023-12-20
2. Estimation of the Ku-band accuracy of a simplified equivalent circuit for a Schottky gate SiN/AlGaN/GaN HEMT;2023-09-07
3. Magnetic characterization of AlGaN/GaN/Si high electron mobility transistors;2023 International Conference on Control, Automation and Diagnosis (ICCAD);2023-05-10
4. Electrical characterization of AlGaN/GaN/Si high electron mobility transistors;Journal of Ovonic Research;2022-04-12
5. Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors;Silicon;2021-10-29
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