Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses-Reference-Cited by-同舟云学术

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Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

Published:2013-10 Issue:8 Volume:13 Page:1600-1603
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Ryu Han-Youl,Jeon Ki-Seong,Sung Jun-Ho,Lee Min-Woo,Lee Euna,Song Hooyoung,Kang Min-Gu,Choi Yoonho,Lee Jeong-Soo

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference26 articles.

1. Solid-State Light Sources Getting Smart

2. Performance of high-power III-nitride light emitting diodes

3. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

4. High-Power and High-Efficiency InGaN-Based Light Emitters

5. High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates;Scientific Reports;2017-04

2. Evaluation of the temperature-dependent internal quantum efficiency and the light-extraction efficiency in a GaN-based blue light-emitting diode by using a rate equation model;Journal of the Korean Physical Society;2016-10

3. Heteroepitaxial Growth of GaN on Unconventional Templates and Layer-Transfer Techniques for Large-Area, Flexible/Stretchable Light-Emitting Diodes;Advanced Optical Materials;2015-12-20

4. Effect of p-AlGaN electron blocking layers on the injection and radiative efficiencies in InGaN/GaN light emitting diodes;Current Applied Physics;2015-09

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