Effect of p-AlGaN electron blocking layers on the injection and radiative efficiencies in InGaN/GaN light emitting diodes
Author:
Funder
Ministry of Knowledge Economy
National Research Foundation
Ministry of Education
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference22 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes
3. On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
4. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
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1. Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes;Applied Physics B;2019-11-20
2. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes;Materials;2017-10-26
3. Modeling and simulation of efficiency droop in GaN-based blue light-emitting diodes incorporating the effect of reduced active volume of InGaN quantum wells;Current Applied Physics;2017-10
4. A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode;Chinese Physics Letters;2017-01
5. High Temperature Behavior of Injection and Radiative Efficiencies and Its Effects on the Efficiency Droop in InGaN/GaN Light Emitting Diodes;Journal of Nanoscience and Nanotechnology;2016-11-01
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