A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode-Reference-Cited by-同舟云学术

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A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

Published:2017-01 Issue:1 Volume:34 Page:017301
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Wang Lai,Meng Xiao,Song Jung-Hoon,Kim Tae-Soo,Lim Seung-Young,Hao Zhi-Biao,Luo Yi,Sun Chang-Zheng,Han Yan-Jun,Xiong Bing,Wang Jian,Li Hong-Tao

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/34/1/017301/pdf

Reference18 articles.

1. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

2. Efficiency droop in nitride-based light-emitting diodes

3. On the importance of radiative and Auger losses in GaN-based quantum wells

4. A numerical study of Auger recombination in bulk InGaN

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection*;Chinese Physics B;2020-04-01

2. Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates;Applied Sciences;2019-10-03

3. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes;Materials;2017-10-26

4. The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence;Chinese Physics Letters;2017-07

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