Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection*

Abstract

It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing. The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection. Thus, there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing, even under the same lattice temperature. A modified and easily used ABC-model is proposed. It describes that the slope of the radiative recombination rate gradually decreases to zero, and further reaches a negative value in a small range of lattice temperature increasing. These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.