The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence-Reference-Cited by-同舟云学术

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The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence

Published:2017-07 Issue:7 Volume:34 Page:077301
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Qi Wei-Jing,Xu Long-Quan,Mo Chun-Lan,Wang Xiao-Lan,Ding Jie,Wang Guang-Xu,Pan Shuan,Zhang Jian-Li,Wu Xiao-Ming,Liu Jun-Lin,Jiang Feng-Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/34/7/077301/pdf

Reference14 articles.

1. Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer

2. Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding

3. Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhance the efficiency of green-yellow LED by optimizing the growth condition of preparation layer;Superlattices and Microstructures;2020-05

2. Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices;Optical Materials;2018-08

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