Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3531957
Reference21 articles.
1. Introduction
2. Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping
3. The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers
4. High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
5. Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer
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