On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

Published:2014-04-02 Issue:S3 Volume:22 Page:A779
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Zhang Zi-Hui,Liu Wei,Tan Swee Tiam,Ju Zhengang,Ji Yun,Kyaw Zabu,Zhang Xueliang,Hasanov Namig,Zhu Binbin,Lu Shunpeng,Zhang Yiping,Sun Xiao Wei,Demir Hilmi Volkan

Funder

Agency for Science, Technology and Research (A*STAR)

National Research Foundation-Prime Minister's office, Republic of Singapore (NRF)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference27 articles.

1. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

2. Prospects for LED lighting

3. On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

4. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

5. InGaN/GaN light-emitting diode with a polarization tunnel junction

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