Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer-Reference-Cited by-同舟云学术

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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Published:2013-02-21 Issue:4 Volume:21 Page:4958
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Zhang Zi-Hui,Tan Swee Tiam,Liu Wei,Ju Zhengang,Zheng Ke,Kyaw Zabu,Ji Yun,Hasanov Namig,Sun Xiao Wei,Demir Hilmi Volkan

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference38 articles.

1. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

2. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

3. III-Nitride Photonics

4. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

5. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

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1. Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability;IEEE Transactions on Electron Devices;2024-08

2. Effect of p-GaN layer and High-k material in InGaN/GaN LED for optical performance enhancement;Journal of Optics;2024-07-30

3. Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage;Optics Express;2024-03-06

4. Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator;Optical Materials Express;2023-10-30

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