Step-type quantum wells with slightly varied InN composition for GaN-based yellow micro light-emitting diodes-Reference-Cited by-同舟云学术

Step-type quantum wells with slightly varied InN composition for GaN-based yellow micro light-emitting diodes

Published:2021-04-05 Issue:11 Volume:60 Page:3006
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Shao Hua,Chu Chunshuang,Chuang Chia-Ming,Hang Sheng,Che Jiamang,Kou Jianquan,Tian Kangkai,Zhang Yonghui^ORCID,Zheng Quan,Zhang Zi-Hui^ORCID,Li Qing,Kuo Hao-Chung

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

Joint Research Project for Tunghsu Group and Hebei University of Technology

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference26 articles.

1. High-Performance Color-Converted Full-Color Micro-LED Arrays

2. III-nitride blue microdisplays

3. III-Nitride full-scale high-resolution microdisplays

4. Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates

5. Rare-Earth-Free Direct-Emitting Light-Emitting Diodes for Solid-State Lighting

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