Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates-Reference-Cited by-同舟云学术

Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates

Published:2017-10-09 Issue:41 Volume:9 Page:36417-36422
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Hongjian¹^ORCID,Khoury Michel¹,Bonef Bastien¹,Alhassan Abdullah I.¹,Mughal Asad J.¹^ORCID,Azimah Ezzah¹²,Samsudin Muhammad E.A.¹²,De Mierry Philippe³,Nakamura Shuji¹⁴,Speck James S.¹,DenBaars Steven P.¹⁴

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, United States

2. Institute of Nano Optoelectronics Research and Technology, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia

3. CNRS−CRHEA, Rue Bernard Grégory, 06560 Valbonne, France

4. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93117, United States

Funder

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

University of California, Santa Barbara

Collaborative Research in Engineering, Science and Technology, Malaysia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b11718

Reference32 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Solid-State Light Sources Getting Smart

3. White light emitting diodes with super-high luminous efficacy

4. Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

5. Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs;Scientific Reports;2024-03-25

2. Bright and Stable Yellow Quantum Dot Light‐Emitting Diodes Through Core–Shell Nanostructure Engineering;Small;2023-12-28

3. Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films;Chinese Physics B;2023-12-01

4. Electrically pumped optomechanical beam GaN-LED accelerometer based on the quantum-confined Stark effect;Photonics Research;2023-08-28

5. Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure;Advanced Photonics Research;2023-05-26