Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=5/a=052102/pdf
Reference19 articles.
1. Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
2. High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
3. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization
4. Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
5. Green Gap Spectral Range Light-Emitting Diodes with Self-Assembled InGaN Quantum Dots Formed by Enhanced Phase Separation
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