Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes-Reference-Cited by-同舟云学术

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Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

Published:2012-01-16 Issue:3 Volume:100 Page:031905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ahn Byung-Jun,Kim Tae-Soo,Dong Yanqun,Hong Moon-Taek,Song Jung-Hoon,Song Jae-Ho,Yuh Hwan-Kuk,Choi Sung-Chul,Bae Duk-Kyu,Moon Youngboo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3678029

Reference24 articles.

1. The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

2. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

3. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

4. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

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1. Analytical models of electron leakage currents in gallium nitride-based laser diodes and light-emitting diodes;Optics Express;2022-01-21

2. Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges;Materials;2020-11-17

3. Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation;Journal of Applied Physics;2020-09-28

4. Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells;Journal of Applied Physics;2020-01-14

5. Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements;Scientific Reports;2019-12

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