Light-induced negative differential resistance effect in a resistive switching memory device-Reference-Cited by-同舟云学术

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Light-induced negative differential resistance effect in a resistive switching memory device

Published:2020-03 Issue:3 Volume:20 Page:371-378
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Wang Xiaojun,Wang Yuanyang,Feng Ming,Wang Kaiyue,Bai Pinbo,Tian Yuming

Funder

Key Research and Development (R&D) Projects of Shanxi Province

Shanxi Province Major Science and Technology Projects

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference50 articles.

1. Symmetrical negative differential resistance behavior of a resistive switching device;Du;ACS Nano,2012

2. Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state;Zhu;Apl. Mater.,2019

3. Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device;Sun;J. Appl. Phys.,2014

4. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing;Kumar;Nature,2017

5. Resistive switching mechanisms on TaOx and SrRuO3 thin-film surfaces probed by scanning tunneling microscopy;Moors;ACS Nano,2016

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3. Ultralow Power In-Sensor Neuronal Computing with Oscillatory Retinal Neurons for Frequency-Multiplexed, Parallel Machine Vision;ACS Nano;2024-08-14

4. Light Dependent Negative Differential Resistance and Resistive Switching in Oxide Semiconductors;IEEE Photonics Technology Letters;2024-08-01

5. Compliance-Free and Forming-Free Digital and Analog Resistive Switching in a Perovskite-Based Artificial Synaptic Device: Mimicking Classical Pavlovian Learning;ACS Applied Electronic Materials;2024-04-30

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