Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device-Reference-Cited by-同舟云学术

Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device

Published:2012-02-13 Issue:3 Volume:6 Page:2517-2523
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Du Yuanmin¹,Pan Hui²,Wang Shijie³,Wu Tom⁴,Feng Yuan Ping¹,Pan Jisheng³,Wee Andrew Thye Shen¹

Affiliation:

1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore

2. Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Singapore 138632, Singapore

3. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore

4. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn204907t

Reference54 articles.

1. Resonant tunneling in semiconductor double barriers

2. New Transport Phenomenon in a Semiconductor "Superlattice"

3. Negative differential resistance in a bilayer molecular junction

4. Mechanism for bistability in organic memory elements

5. Organic Materials and Thin-Film Structures for Cross-Point Memory Cells Based on Trapping in Metallic Nanoparticles

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