Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
Author:
Affiliation:
1. Peter Grünberg Institut, Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425 Jülich, Germany
2. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany
Funder
Bundesministerium für Bildung und Forschung
Helmholtz Association
Deutsche Forschungsgemeinschaft
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b07020
Reference51 articles.
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4. Wei, Z.; Takagi, T.; Kanzawa, Y.; Katoh, Y.; Ninomiya, T.; Kawai, K.; Muraoka, S.; Mitani, S.; Katayama, K.; Fujii, S.; Miyanaga, R.; Kawashima, Y.; Mikawa, T.; Shimakawa, K.; Aono, K.Retention Model for High-Density ReRAM. In2012 4th IEEE International Memory Workshop, IMW 2012; 2012 4th IEEE International Memory Workshop, 2012.
5. Resistive switching in transition metal oxides
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