Photoinduced Negative Differential Resistance at a Graphene/Silicon Interface: A Nonadiabatic Quantum Molecular Dynamics Study-Reference-Cited by-同舟云学术

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Photoinduced Negative Differential Resistance at a Graphene/Silicon Interface: A Nonadiabatic Quantum Molecular Dynamics Study

Published:2024-09-03 Issue: Volume: Page:9226-9232
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Hokyo Hinata¹²,Ito Kai²,Kalia Rajiv K.¹,Kapadia Rehan³^ORCID,Nakano Aiichiro¹^ORCID,Shimamura Kohei²^ORCID,Shimojo Fuyuki²^ORCID,Vashishta Priya¹^ORCID

Affiliation:

1. Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089-0242, United States

2. Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan

3. Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089-2560, United States

Funder

Division of Electrical, Communications and Cyber Systems

Division of Civil, Mechanical and Manufacturing Innovation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.4c02272

Reference33 articles.

1. Negative differential resistance in novel nanoscale devices

2. New Phenomenon in Narrow Germaniump−nJunctions

3. Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state

4. Ultralow Power In-Sensor Neuronal Computing with Oscillatory Retinal Neurons for Frequency-Multiplexed, Parallel Machine Vision

5. Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes

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