Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes-Reference-Cited by-同舟云学术

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Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes

Published:2016-07-28 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Lee Kyeong Won,Jang Chan Wook,Shin Dong Hee,Kim Jong Min,Kang Soo Seok,Lee Dae Hun,Kim Sung,Choi Suk-Ho,Hwang Euyheon

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep30669.pdf

Reference42 articles.

1. Pavesi, L., Dal Negro, L., Mazzoleni, C., FranzoÁ, G. & Priolo, F. Optical gain in silicon nanocrystals. Nature 408, 440–444 (2000).

2. Marconi, A. et al. High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling. Appl. Phys. Lett. 94, 221110 (2009).

3. Anopchenko, A. et al. Graded-size Si quantum dot ensembles for efficient light-emitting diodes. Appl. Phys. Lett. 99, 181108 (2011).

4. Lin, G.-R., Lin, C.-J. & Kuo, H.-C. Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array. Appl. Phys. Lett. 91, 093122 (2007).

5. Cho, E.-C. et al. Silicon quantum dot/crystalline silicon solar cells. Nanotechnology 19, 245201 (2008).

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