Mechanism analysis of a flexible organic memristive memory with capacitance effect and negative differential resistance state

Author:

Zhu Shouhui1,Sun Bai1ORCID,Ranjan Shubham2ORCID,Zhu Xiaoli3,Zhou Guangdong4,Zhao Hongbin5ORCID,Mao Shuangsuo1,Wang Hongyan1,Zhao Yong1,Fu Guoqiang6

Affiliation:

1. School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China

2. Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

3. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

4. Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China

5. State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China

6. Department of Electromechanical Measuring and Controlling, School of Mechanical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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