Computational Study on Interlocked-Ferroelectricity-Contributed High-Performance Memristors Based on Two-Dimensional van der Waals Ferroelectric Semiconductors-Reference-Cited by-同舟云学术

Computational Study on Interlocked-Ferroelectricity-Contributed High-Performance Memristors Based on Two-Dimensional van der Waals Ferroelectric Semiconductors

Published:2024-05-08 Issue:20 Volume:16 Page:26428-26438
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Zhuo¹²,Li Yu-Chen²,Kong Tie-Lin¹²,Lv Yang-Yang³⁴^ORCID,Fa Wei¹,Chen Shuang²^ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures and Department of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210023, China

2. Kuang Yaming Honors School, Nanjing University, Nanjing, Jiangsu 210023, China

3. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, China

4. Key Laboratory of Quantum Materials and Devices of Ministry of Education Southeast University, Nanjing, Jiangsu 211189, China

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University

High Performance Computing Center in Nanjing University

High-Performance Computing Center of Collaborative Innovation Center of Advanced Microstructures in Nanjing University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c03812

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