Funder
National Research Council of Science & Technology
Korea government
National Research Foundation (NRF) of Korea
Korean Government
Electronics and Telecommunications Research Institute (ETRI) grant funded by the Korean government
Subject
General Physics and Astronomy,General Materials Science
Reference37 articles.
1. Ferroelectric Hafnium Oxide: a CMOS-compatible and highly scalable approach to future ferroelectric memories;Müller;IEDM,2013
2. Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects;Müller;J. Solid State Sci. Technol.,2015
3. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond;Dünkel;IEDM,2017
4. Ferroelectricity in simple binary ZrO2 and HfO2;Müller;Nano Lett.,2012
5. Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes;Park;Appl. Phys. Lett.,2013
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