Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Queenstown, Singapore
2. School of Information Science and Engineering, Shandong University, Qingdao, China
Funder
Singapore Ministry of Education
ARTIC Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10328902/10278167.pdf?arnumber=10278167
Reference42 articles.
1. Grain Size Engineering of Ferroelectric Zr-doped HfO2 for the Highly Scaled Devices Applications
2. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
3. A Thousand State Superlattice(SL) FEFET Analog Weight Cell
4. A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process
5. Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding
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