HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS-Reference-Cited by-同舟云学术

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HF_XZR_1-XO₂ Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >10⁹ Cycles, 2P_R of 40.6μC/CM², Write Voltage Down to 1.5 V, and Switching Speed of 30 NS

Published:2023-06-26 Issue: Volume: Page:
ISSN:
Container-title:2023 China Semiconductor Technology International Conference (CSTIC)
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Author:

Li Zhixiong¹,Zhou Bing¹,Xu Jiawei¹,Xu Shuaihang¹,Lan Jun¹,Zhu Quanzhou¹,Zhu Yingjie¹,Li Jie¹,Feng Xuewei²,Shen Mei¹,Zhou Feichi¹,Lin Longyang¹,Li Yida¹

Affiliation:

1. Southern University of Science and Technology,Shenzhen,China,518055

2. Shanghai Jiao Tong University,Shanghai,China,200240

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219383.pdf?arnumber=10219383

Reference11 articles.

1. Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process

2. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

3. Experimental Demonstration of Non-volatile Capacitive Crossbar Array for In-memory Computing

4. Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

5. The Past, the Present, and the Future of Ferroelectric Memories

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