Experimental Demonstration of Non-volatile Capacitive Crossbar Array for In-memory Computing
Author:
Affiliation:
1. Georgia Institute of Technology,Atlanta,GA,USA,30332
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720508.pdf?arnumber=9720508
Reference10 articles.
1. Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process
2. Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics
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