Capacitive Synaptor With Overturned Charge Injection for Compute-in-Memory-Reference-Cited by-同舟云学术

Capacitive Synaptor With Overturned Charge Injection for Compute-in-Memory

Published:2024-05 Issue:5 Volume:45 Page:929-932
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Choong-Ki¹^ORCID,Phadke Omkar²^ORCID,Kim Tae-Hyeon³^ORCID,Kim Myung-Su⁴^ORCID,Yu Ji-Man⁴^ORCID,Yoo Min-Soo¹,Choi Yang-Kyu⁴^ORCID,Yu Shimeng²^ORCID

Affiliation:

1. SK Hynix Inc., Icheon-si, South Korea

2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

3. Department of Semiconductor Engineering, Seoul National University of Science and Technology, Seoul, South Korea

4. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

Funder

PRISM Center through the SRC/DARPA JUMP 2.0 Program

National Research Foundation (NRF) of the Republic of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10480678.pdf?arnumber=10480678

Reference10 articles.

1. Nonvolatile Capacitive Synapse: Device Candidates for Charge Domain Compute-In-Memory

2. Nonvolatile Capacitive Crossbar Array for In‐Memory Computing

3. Experimental Demonstration of Non-volatile Capacitive Crossbar Array for In-memory Computing

4. Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors

5. Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High C_HCS/C_LCS, Fast Speed, and Long Retention

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