Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors-Reference-Cited by-同舟云学术

Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors

Published:2023-12-09 Issue: Volume: Page:
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Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Mukherjee S.¹,Bizindavyi J.¹,Luo Y-C.²,Clima S.¹,Read J.²,Popovici M. I.¹,Xiang Y.¹,Bazzazian N.¹,Belmonte A.¹,Delhougne R.¹,Kar G. S.¹,Catthoor F.¹,Afanas’Ev V. V.¹,Yu S.²,Van Houdt J.¹

Affiliation:

1. Imec,Leuven,Belgium

2. Georgia Institute of Technology,Atlanta,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413879.pdf?arnumber=10413879

Reference9 articles.

1. Wake-Up Free La-Doped HfO₂-ZrO₂ Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique

2. Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

3. Nonvolatile Capacitive Crossbar Array for In‐Memory Computing

4. A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film

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