Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors-Reference-Cited by-同舟云学术

Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors

Published:2023-07 Issue:7 Volume:44 Page:1092-1095
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Mukherjee Shankha¹^ORCID,Bizindavyi Jasper¹^ORCID,Clima Sergiu¹^ORCID,Popovici Mihaela I.¹,Piao Xiaoyu¹^ORCID,Katcko Kostantine¹,Catthoor Francky²,Yu Shimeng³^ORCID,Afanas’ev Valeri V.⁴^ORCID,Van Houdt Jan¹^ORCID

Affiliation:

1. imec, Leuven, Belgium

2. Department of Electrical Engineering (ESAT), KU Leuven, Leuven, Belgium

3. Georgia Institute of Technology, Atlanta, GA, USA

4. Department of Physics and Astronomy, Semiconductor Physics Laboratory, KU Leuven, Leuven, Belgium

Funder

imec’s Industry Affiliated Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10130397.pdf?arnumber=10130397

Reference29 articles.

1. Nonvolatile Capacitive Crossbar Array for In‐Memory Computing

2. HfO₂-Based Ferroelectric Optoelectronic Memcapacitors

3. Non-volatile, small-signal capacitance in ferroelectric capacitors

4. Experimental Demonstration of Non-volatile Capacitive Crossbar Array for In-memory Computing

5. Energy-efficient memcapacitor devices for neuromorphic computing

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1. Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches;ACS Applied Electronic Materials;2024-08-16

2. Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM;IEEE Transactions on Electron Devices;2024-08

3. Modeling and Comparing the Impact of Resistive and Capacitive Crossbar Associated Parasitics of Neuromorphic Circuits;2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2024-06-27

4. Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads;Scientific Reports;2024-04-24

5. Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14