Nonvolatile Capacitive Synapse: Device Candidates for Charge Domain Compute-In-Memory
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/10035030/10272008/10272016.pdf?arnumber=10272016
Reference31 articles.
1. Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse
2. Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention
3. Capacitive neural network with neuro-transistors
4. Energy-efficient memcapacitor devices for neuromorphic computing
5. Design and Optimization of Non-volatile Capacitive Crossbar Array for In-Memory Computing
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