Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures-Reference-Cited by-同舟云学术

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Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

Published:2016-11 Issue: Volume:109 Page:737-746
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Xiong Wenqi,Xia Congxin,Zhao Xu,Wang Tianxing,Jia Yu

Funder

National Natural Science Foundation of China

The High Performance Computing Center of Henan Normal University

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference63 articles.

1. Strain induced piezoelectric effect in black phosphorus and MoS2 van der Waals heterostructure;Huang;Sci. Rep.,2015

2. Electric-field tunable band offsets in black phosphorus and MoS2 van der Waals p-n heterostructure;Huang;J. Phys. Chem. Lett.,2015

3. Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode;Deng;ACS Nano,2014

4. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures;Lee;ACS Nano,2013

5. All chemical vapor deposition growth of MoS2: h-BN vertical van der Waals heterostructures;Wang;ACS Nano,2015

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2. First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB₄ Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability;ACS Applied Materials & Interfaces;2024-06-06

3. Tunable electronic and optical properties of h-BP/MoS2 van der Waals heterostructures toward optoelectronic applications;Journal of Physics and Chemistry of Solids;2024-05

4. Ultrafast charge transfer in anisotropic black phosphorus/ TiS3 heterostructures for photoconversion;Physical Review B;2024-02-26

5. Self-formed asymmetric Schottky contacts between graphene and WSiGeN₄;Physical Chemistry Chemical Physics;2024

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