First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB<sub>4</sub> Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability-Reference-Cited by-同舟云学术

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First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB₄ Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability

Published:2024-06-06 Issue:24 Volume:16 Page:31513-31523
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Guo Hao¹²^ORCID,Pan Jinbo²³,Du Shixuan²³⁴^ORCID

Affiliation:

1. School of Urban Construction, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China

2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3. School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China

4. Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China

Funder

National Key Research and Development Program of China

Department of Education of Hebei Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c05905

Reference74 articles.

1. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

2. Schottky‐Contacted Nanowire Sensors

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Quantum Spin Hall Effect in Graphene

5. Black Phosphorus Nanosheets: Synthesis, Characterization and Applications

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