Self-formed asymmetric Schottky contacts between graphene and WSiGeN<sub>4</sub>-Reference-Cited by-同舟云学术

Self-formed asymmetric Schottky contacts between graphene and WSiGeN₄

Published:2024 Issue:31 Volume:26 Page:21110-21116
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang Dingbo¹²,Zhao Fengai²,Wang Hongyan¹²^ORCID,Ni Yuxiang¹²^ORCID

Affiliation:

1. Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, School of Materials Science and Engineering, Southwest Jiaotong University, 610031 Chengdu, China

2. School of Physical Science and Technology, Southwest Jiaotong University, 610031 Chengdu, China

Abstract

An asymmetric vdW graphene/WSiGeN4/graphene diode demonstrates a remarkable asymmetric I–V curve. Its carrier transport mechanisms are primarily governed by thermionic excitation under positive bias and tunneling under negative bias.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP02099E

Reference46 articles.

1. Nanoscale molecular rectifiers

2. Asymmetric Heat Transfer with Linear Conductive Metamaterials

3. Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

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